On September 20, ChangXin Memory announced mass production of its fifth-generation $DRAM platform: key structural spacing reduced to 11.95nm. Based on an 8Gb chip, the number of dies per wafer (gross dies) increases by at least 50%; two 24Gb LPDDR5X models have entered mass production, with capacity 50% higher than that of the previous generation’s comparable products.
The mass-production products disclosed in this announcement are LPDDR5X, mainly entering smartphones and portable devices; no HBM mass-production information appeared.
MU is currently bearing the price, share, and cost competition in mobile DRAM. For AI server memory, the situation still depends on HBM customer qualification, shipments, and supply-demand.
One more detail: “gross dies +50%” occurs before defective units are removed, so it cannot be directly read as “+50% saleable output.”
#美光 #长鑫存储 #存储芯片
The mass-production products disclosed in this announcement are LPDDR5X, mainly entering smartphones and portable devices; no HBM mass-production information appeared.
MU is currently bearing the price, share, and cost competition in mobile DRAM. For AI server memory, the situation still depends on HBM customer qualification, shipments, and supply-demand.
One more detail: “gross dies +50%” occurs before defective units are removed, so it cannot be directly read as “+50% saleable output.”
#美光 #长鑫存储 #存储芯片
