According to CNBC, Samsung Electronics and SK Hynix are upgrading their China plants to produce more advanced NAND memory chips, according to people familiar with the plans. Samsung is converting its Xi’an facility to make 286-layer V9 chips, targeting monthly output of 5,000 wafers in December this year and 40,000 by December 2027. SK Hynix plans to shift its Dalian plant from 192-layer products to chips with 240 layers or more. Both companies said the upgrades were underway and being conducted in consultation with Washington. U.S. export rules require annual licenses for certain equipment, and Reuters could not determine whether U.S. authorities had approved all equipment needed for the planned upgrades.