September 22, Chosun Ilbo report: AI breaks the traditional synchronous cycle of DRAM, but NAND faces surplus pressure.
In the past, DRAM and NAND prices would be affected by soft demand for general NAND used in smartphones and PCs, along with increased production from manufacturers such as China’s Yangtze Memory (YMTC), leading to growing downward pressure on prices.· NAND: Strong demand for AI server eSSD, but consumer-grade products face increasing downward price pressure due to weak demand and expanded production capacity in China.
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